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STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
60 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
180 W
Minimum DC Current Gain
9
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.3 x 15.9 x 5.3mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 321,00
€ 10,70 1 kpl (30 kpl/putki) (ilman ALV)
€ 402,86
€ 13,428 1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 321,00
€ 10,70 1 kpl (30 kpl/putki) (ilman ALV)
€ 402,86
€ 13,428 1 kpl (30 kpl/putki) (Sis ALV:n)
30
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Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
60 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
180 W
Minimum DC Current Gain
9
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.3 x 15.9 x 5.3mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.