Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Package Type
PowerSO
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+165 °C
Length
9.6mm
Width
9.5mm
Transistor Material
Si
Typical Power Gain
14 dB
Height
3.6mm
Tuotetiedot
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 22,20
kpl (ilman ALV)
€ 27,86
kpl (Sis ALV:n)
Standardi
1
€ 22,20
kpl (ilman ALV)
€ 27,86
kpl (Sis ALV:n)
Standardi
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 4 | € 22,20 |
5 - 9 | € 20,80 |
10 - 24 | € 19,70 |
25 - 49 | € 18,60 |
50+ | € 18,10 |
Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Package Type
PowerSO
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+165 °C
Length
9.6mm
Width
9.5mm
Transistor Material
Si
Typical Power Gain
14 dB
Height
3.6mm
Tuotetiedot
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.