Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Package Type
PowerSO
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
9.6mm
Maximum Operating Temperature
+165 °C
Height
3.6mm
Typical Power Gain
14 dB
Tuotetiedot
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
€ 40,60
kpl (toimitus putkessa) (ilman ALV)
€ 50,95
kpl (toimitus putkessa) (Sis ALV:n)
Tuotantopakkaus (Putki)
2
€ 40,60
kpl (toimitus putkessa) (ilman ALV)
€ 50,95
kpl (toimitus putkessa) (Sis ALV:n)
Tuotantopakkaus (Putki)
2
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Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Package Type
PowerSO
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
9.6mm
Maximum Operating Temperature
+165 °C
Height
3.6mm
Typical Power Gain
14 dB
Tuotetiedot
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.