Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
500 V
Package Type
D2PAK (TO-263)
Series
MDmesh
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
45 nC @ 10 V
Width
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.6mm
Product details
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 9.70
€ 4.85 Each (Supplied on a Reel) (Exc. Vat)
€ 12.17
€ 6.09 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
2
€ 9.70
€ 4.85 Each (Supplied on a Reel) (Exc. Vat)
€ 12.17
€ 6.09 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
2
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
500 V
Package Type
D2PAK (TO-263)
Series
MDmesh
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
45 nC @ 10 V
Width
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.6mm
Product details


