STMicroelectronics STGWT80H65DFB, Type N-Channel IGBT 650 V, 3-Pin TO-3P, Through Hole

RS Stock No.: 829-7136PBrand: STMicroelectronicsManufacturers Part No.: STGWT80H65DFB
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Technical Document

Specifications

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

469W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

HB

Standards/Approvals

RoHS

Automotive Standard

No

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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View all in IGBTs

Stock information temporarily unavailable.

€ 7.70

€ 7.70 Each (Supplied in a Tube) (Exc. Vat)

€ 9.66

€ 9.66 Each (Supplied in a Tube) (inc. VAT)

STMicroelectronics STGWT80H65DFB, Type N-Channel IGBT 650 V, 3-Pin TO-3P, Through Hole
Select packaging type

€ 7.70

€ 7.70 Each (Supplied in a Tube) (Exc. Vat)

€ 9.66

€ 9.66 Each (Supplied in a Tube) (inc. VAT)

STMicroelectronics STGWT80H65DFB, Type N-Channel IGBT 650 V, 3-Pin TO-3P, Through Hole

Stock information temporarily unavailable.

Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

469W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

HB

Standards/Approvals

RoHS

Automotive Standard

No

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more