STMicroelectronics STripFET F3 Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerFLAT

RS Stock No.: 165-8008Brand: STMicroelectronicsManufacturers Part No.: STL8N10LF3
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Technical Document

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerFLAT

Series

STripFET F3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

50mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

70W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20.5nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

5.2 mm

Height

0.95mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Country of Origin

China

Product details

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

€ 3,000.00

€ 1.00 Each (On a Reel of 3000) (Exc. Vat)

€ 3,765.00

€ 1.255 Each (On a Reel of 3000) (inc. VAT)

STMicroelectronics STripFET F3 Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerFLAT

€ 3,000.00

€ 1.00 Each (On a Reel of 3000) (Exc. Vat)

€ 3,765.00

€ 1.255 Each (On a Reel of 3000) (inc. VAT)

STMicroelectronics STripFET F3 Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerFLAT

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerFLAT

Series

STripFET F3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

50mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

70W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20.5nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

5.2 mm

Height

0.95mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Country of Origin

China

Product details

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more