Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.4mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 3,47
€ 0,694 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 4,35
€ 0,871 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 3,47
€ 0,694 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 4,35
€ 0,871 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 5 | € 0,694 | € 3,47 |
10 - 95 | € 0,587 | € 2,94 |
100 - 495 | € 0,491 | € 2,46 |
500 - 995 | € 0,478 | € 2,39 |
1000+ | € 0,467 | € 2,34 |
Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.4mm
Minimum Operating Temperature
-55 °C
Tuotetiedot