Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
42A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
63mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
98nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 10.00
€ 10.00 Each (Exc. Vat)
€ 12.55
€ 12.55 Each (inc. VAT)
Standard
1
€ 10.00
€ 10.00 Each (Exc. Vat)
€ 12.55
€ 12.55 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
42A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
63mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
98nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


