Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Series
STripFET II
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
135nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
45W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 25.50
€ 2.55 Each (Supplied in a Tube) (Exc. Vat)
€ 32.00
€ 3.20 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
€ 25.50
€ 2.55 Each (Supplied in a Tube) (Exc. Vat)
€ 32.00
€ 3.20 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
| Quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 18 | € 2.55 | € 5.10 |
| 20 - 48 | € 2.50 | € 5.00 |
| 50 - 98 | € 2.45 | € 4.90 |
| 100+ | € 2.25 | € 4.50 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Series
STripFET II
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
135nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
45W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


