Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Series
STripFET V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
6 nC @ 4.5 V
Width
1.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.3mm
Tuotetiedot
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,151
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,187
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
€ 0,151
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,187
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Series
STripFET V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
6 nC @ 4.5 V
Width
1.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.3mm
Tuotetiedot
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.