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STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
10 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,252
1 kpl (50 kpl/putki) (ilman ALV)
€ 0,316
1 kpl (50 kpl/putki) (Sis ALV:n)
50
€ 0,252
1 kpl (50 kpl/putki) (ilman ALV)
€ 0,316
1 kpl (50 kpl/putki) (Sis ALV:n)
50
Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
10 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.