Tekninen dokumentti
Tekniset tiedot
Merkki
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
64 nC @ 10 V
Length
4.85mm
Height
1.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,104
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,129
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 0,104
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,129
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
Tekninen dokumentti
Tekniset tiedot
Merkki
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
64 nC @ 10 V
Length
4.85mm
Height
1.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V