Tekninen dokumentti
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Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
0.64mm
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Width
1.04mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.35mm
Tuotetiedot
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,039
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€ 0,048
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
€ 0,039
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,048
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
0.64mm
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Width
1.04mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.35mm
Tuotetiedot