Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Tuotetiedot
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,878
kpl (toimitus kelassa) (ilman ALV)
€ 1,089
kpl (toimitus kelassa) (Sis ALV:n)
10
€ 0,878
kpl (toimitus kelassa) (ilman ALV)
€ 1,089
kpl (toimitus kelassa) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
10 - 90 | € 0,878 | € 8,78 |
100 - 240 | € 0,632 | € 6,32 |
250 - 490 | € 0,593 | € 5,93 |
500 - 740 | € 0,555 | € 5,55 |
750+ | € 0,546 | € 5,46 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Tuotetiedot