Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
16.6 nC @ 4.5 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,415
kpl (toimitus kelassa) (ilman ALV)
€ 0,515
kpl (toimitus kelassa) (Sis ALV:n)
5
€ 0,415
kpl (toimitus kelassa) (ilman ALV)
€ 0,515
kpl (toimitus kelassa) (Sis ALV:n)
5
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
16.6 nC @ 4.5 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Tuotetiedot