Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Series
FemtoFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
1.04mm
Typical Gate Charge @ Vgs
1.04 nC @ 4.5 V
Number of Elements per Chip
1
Width
0.64mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.35mm
Tuotetiedot
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,772
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 0,957
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
€ 0,772
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 0,957
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
20 - 20 | € 0,772 | € 15,44 |
40 - 80 | € 0,751 | € 15,02 |
100 - 480 | € 0,732 | € 14,64 |
500 - 980 | € 0,713 | € 14,26 |
1000+ | € 0,695 | € 13,90 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Series
FemtoFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
1.04mm
Typical Gate Charge @ Vgs
1.04 nC @ 4.5 V
Number of Elements per Chip
1
Width
0.64mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.35mm
Tuotetiedot