Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
60 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,988
kpl (toimitus kelassa) (ilman ALV)
€ 1,225
kpl (toimitus kelassa) (Sis ALV:n)
5
€ 0,988
kpl (toimitus kelassa) (ilman ALV)
€ 1,225
kpl (toimitus kelassa) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
5 - 20 | € 0,988 | € 4,94 |
25 - 45 | € 0,692 | € 3,46 |
50 - 245 | € 0,605 | € 3,02 |
250 - 495 | € 0,521 | € 2,60 |
500+ | € 0,462 | € 2,31 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
60 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Tuotetiedot