Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Philippines
Tuotetiedot
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,25
1 kpl (50 kpl/putki) (ilman ALV)
€ 1,55
1 kpl (50 kpl/putki) (Sis ALV:n)
50
€ 1,25
1 kpl (50 kpl/putki) (ilman ALV)
€ 1,55
1 kpl (50 kpl/putki) (Sis ALV:n)
50
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
50 - 50 | € 1,25 | € 62,50 |
100 - 200 | € 1,10 | € 55,00 |
250 - 450 | € 1,05 | € 52,50 |
500 - 700 | € 0,985 | € 49,25 |
750+ | € 0,923 | € 46,15 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Philippines
Tuotetiedot