Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
118 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
16.51mm
Tuotetiedot
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 5,30
1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 6,572
1 kpl (2 kpl/pakkaus) (Sis ALV:n)
2
€ 5,30
1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 6,572
1 kpl (2 kpl/pakkaus) (Sis ALV:n)
2
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
2 - 24 | € 5,30 | € 10,60 |
26+ | € 4,25 | € 8,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
118 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
16.51mm
Tuotetiedot