Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Width
2.2mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
0.2mm
Tuotetiedot
N-Channel NexFET™ Dual MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,572
kpl (toimitus kelassa) (ilman ALV)
€ 0,718
kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
10
€ 0,572
kpl (toimitus kelassa) (ilman ALV)
€ 0,718
kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
10
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Width
2.2mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
0.2mm
Tuotetiedot