Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.25mm
Height
0.9mm
Alkuperämaa
Thailand
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,173
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,215
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,173
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,215
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
3000 - 3000 | € 0,173 | € 519,00 |
6000 - 6000 | € 0,165 | € 495,00 |
9000+ | € 0,157 | € 471,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.25mm
Height
0.9mm
Alkuperämaa
Thailand