Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Width
1.8mm
Number of Elements per Chip
1
Height
0.7mm
Forward Diode Voltage
1.2V
Alkuperämaa
Thailand
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,091
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,113
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,091
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,113
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
3000 - 3000 | € 0,091 | € 273,00 |
6000 - 6000 | € 0,087 | € 261,00 |
9000+ | € 0,082 | € 246,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Width
1.8mm
Number of Elements per Chip
1
Height
0.7mm
Forward Diode Voltage
1.2V
Alkuperämaa
Thailand