Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
2.3mm
Alkuperämaa
Japan
Tuotetiedot
MOSFET Transistors, Toshiba
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 6,25
€ 1,25 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 7,84
€ 1,569 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 6,25
€ 1,25 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 7,84
€ 1,569 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 20 | € 1,25 | € 6,25 |
25 - 45 | € 1,10 | € 5,50 |
50 - 245 | € 1,05 | € 5,25 |
250 - 495 | € 1,00 | € 5,00 |
500+ | € 0,979 | € 4,90 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
2.3mm
Alkuperämaa
Japan
Tuotetiedot