Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
€ 35.90
€ 0.718 Each (Supplied in a Bag) (Exc. Vat)
€ 45.05
€ 0.901 Each (Supplied in a Bag) (inc. VAT)
Production pack (Bag)
50
€ 35.90
€ 0.718 Each (Supplied in a Bag) (Exc. Vat)
€ 45.05
€ 0.901 Each (Supplied in a Bag) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Bag)
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Bag |
|---|---|---|
| 50 - 95 | € 0.718 | € 3.59 |
| 100+ | € 0.623 | € 3.12 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
China
Product details


