Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Maximum Continuous Drain Current
393 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
890 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.95mm
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,892
1 kpl (5000 kpl/kela) (ilman ALV)
€ 1,106
1 kpl (5000 kpl/kela) (Sis ALV:n)
5000
€ 0,892
1 kpl (5000 kpl/kela) (ilman ALV)
€ 1,106
1 kpl (5000 kpl/kela) (Sis ALV:n)
5000
Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Maximum Continuous Drain Current
393 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
890 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.95mm