Tekninen dokumentti
Tekniset tiedot
Merkki
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
17.2 A
Maximum Drain Source Voltage
200 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
19.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
5mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Alkuperämaa
China
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,737
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,914
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,737
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,914
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
17.2 A
Maximum Drain Source Voltage
200 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
19.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
5mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Alkuperämaa
China