Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
960 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.7mm
Number of Elements per Chip
1
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 42.70
€ 0.427 Each (Supplied on a Reel) (Exc. Vat)
€ 53.59
€ 0.536 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
€ 42.70
€ 0.427 Each (Supplied on a Reel) (Exc. Vat)
€ 53.59
€ 0.536 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 240 | € 0.427 | € 4.27 |
| 250 - 490 | € 0.375 | € 3.75 |
| 500 - 990 | € 0.347 | € 3.47 |
| 1000+ | € 0.29 | € 2.90 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
960 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.7mm
Number of Elements per Chip
1
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details


