Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
1.34 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +5 V
Width
1.2mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
7.7 nC @ 5 V
Minimum Operating Temperature
-55 °C
Height
0.6mm
Tuotetiedot
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,155
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 0,192
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
€ 0,155
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 0,192
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
1.34 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +5 V
Width
1.2mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
7.7 nC @ 5 V
Minimum Operating Temperature
-55 °C
Height
0.6mm
Tuotetiedot