Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Width
4mm
Series
ThunderFET
Minimum Operating Temperature
-55 °C
Height
1.5mm
Alkuperämaa
Taiwan, Province Of China
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Hintaa ei saatavilla
2500
Hintaa ei saatavilla
2500
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Width
4mm
Series
ThunderFET
Minimum Operating Temperature
-55 °C
Height
1.5mm
Alkuperämaa
Taiwan, Province Of China