Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,991
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 1,229
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
€ 0,991
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 1,229
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
20 - 80 | € 0,991 | € 19,82 |
100 - 180 | € 0,794 | € 15,88 |
200 - 480 | € 0,754 | € 15,08 |
500 - 980 | € 0,715 | € 14,30 |
1000+ | € 0,675 | € 13,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot