Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
20.82mm
Alkuperämaa
China
Tuotetiedot
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 6,90
kpl (ilman ALV)
€ 8,66
kpl (Sis ALV:n)
Standardi
1
€ 6,90
kpl (ilman ALV)
€ 8,66
kpl (Sis ALV:n)
Standardi
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 9 | € 6,90 |
10 - 24 | € 6,40 |
25 - 49 | € 5,80 |
50 - 99 | € 5,50 |
100+ | € 5,10 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
20.82mm
Alkuperämaa
China
Tuotetiedot