Vishay E Series N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-220AB SiHP080N60E-GE3

RS Stock No.: 228-2875Brand: VishayManufacturers Part No.: SiHP080N60E-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

E Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

Si

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€ 9.20

€ 4.60 Each (In a Pack of 2) (Exc. Vat)

€ 11.55

€ 5.773 Each (In a Pack of 2) (inc. VAT)

Vishay E Series N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-220AB SiHP080N60E-GE3
Select packaging type

€ 9.20

€ 4.60 Each (In a Pack of 2) (Exc. Vat)

€ 11.55

€ 5.773 Each (In a Pack of 2) (inc. VAT)

Vishay E Series N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-220AB SiHP080N60E-GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
2 - 18€ 4.60€ 9.20
20 - 48€ 4.15€ 8.30
50 - 98€ 3.90€ 7.80
100 - 198€ 3.70€ 7.40
200+€ 3.40€ 6.80

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

E Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more