Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Length
6.25mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Forward Diode Voltage
1.1V
Tuotetiedot
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,85
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 2,294
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
€ 1,85
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 2,294
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 45 | € 1,85 | € 9,25 |
50 - 120 | € 1,60 | € 8,00 |
125 - 245 | € 1,40 | € 7,00 |
250 - 495 | € 1,15 | € 5,75 |
500+ | € 0,893 | € 4,46 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Length
6.25mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Forward Diode Voltage
1.1V
Tuotetiedot