Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 17,00
€ 3,40 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 21,34
€ 4,267 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 17,00
€ 3,40 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 21,34
€ 4,267 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
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Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Tuotetiedot