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Merkki
WolfspeedChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
196 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
34 nC @ 20 V, 34 nC @ 5 V
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Alkuperämaa
China
Tuotetiedot
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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Tarkista myöhemmin uudelleen.
€ 14,20
1 kpl (30 kpl/putki) (ilman ALV)
€ 17,608
1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 14,20
1 kpl (30 kpl/putki) (ilman ALV)
€ 17,608
1 kpl (30 kpl/putki) (Sis ALV:n)
30
Tekninen dokumentti
Tekniset tiedot
Merkki
WolfspeedChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
196 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
34 nC @ 20 V, 34 nC @ 5 V
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Alkuperämaa
China
Tuotetiedot
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.