Tekninen dokumentti
Tekniset tiedot
Merkki
WolfspeedChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
370 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
20.4 nC @ 20 V
Width
21.1mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Height
5.21mm
Alkuperämaa
China
Tuotetiedot
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 7,50
1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 9,30
1 kpl (2 kpl/pakkaus) (Sis ALV:n)
2
€ 7,50
1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 9,30
1 kpl (2 kpl/pakkaus) (Sis ALV:n)
2
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
2 - 8 | € 7,50 | € 15,00 |
10 - 28 | € 7,00 | € 14,00 |
30 - 58 | € 6,90 | € 13,80 |
60 - 118 | € 6,70 | € 13,40 |
120+ | € 6,50 | € 13,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
WolfspeedChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
370 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
20.4 nC @ 20 V
Width
21.1mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Height
5.21mm
Alkuperämaa
China
Tuotetiedot
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.