Tekninen dokumentti
Tekniset tiedot
Merkki
WolfspeedChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
17.3 nC @ 15 V
Width
21.1mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
5.21mm
Alkuperämaa
China
Tuotetiedot
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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Tarkista myöhemmin uudelleen.
€ 9,60
kpl (ilman ALV)
€ 11,90
kpl (Sis ALV:n)
1
€ 9,60
kpl (ilman ALV)
€ 11,90
kpl (Sis ALV:n)
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 4 | € 9,60 |
5 - 9 | € 9,00 |
10 - 29 | € 8,80 |
30 - 89 | € 8,60 |
90+ | € 8,40 |
Tekninen dokumentti
Tekniset tiedot
Merkki
WolfspeedChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
17.3 nC @ 15 V
Width
21.1mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
5.21mm
Alkuperämaa
China
Tuotetiedot
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.