Tekninen dokumentti
Tekniset tiedot
Merkki
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
9.5 nC @ 15 V
Width
21.1mm
Number of Elements per Chip
1
Forward Diode Voltage
4.8V
Height
5.21mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 4,70
1 kpl (30 kpl/putki) (ilman ALV)
€ 5,828
1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 4,70
1 kpl (30 kpl/putki) (ilman ALV)
€ 5,828
1 kpl (30 kpl/putki) (Sis ALV:n)
30
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
30 - 120 | € 4,70 | € 141,00 |
150 - 270 | € 4,55 | € 136,50 |
300+ | € 4,45 | € 133,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
9.5 nC @ 15 V
Width
21.1mm
Number of Elements per Chip
1
Forward Diode Voltage
4.8V
Height
5.21mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.