Tekninen dokumentti
Tekniset tiedot
Merkki
WolfspeedMaximum Drain Source Voltage
1200 V
Maximum Drain Source Resistance
4.6 mΩ
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 mW
Maximum Gate Source Voltage
-4 V, 19 V
Maximum Operating Temperature
+175 °C
Transistor Material
SiC
Length
80mm
Typical Gate Charge @ Vgs
1330 nC @ 4/15V
Width
53mm
Number of Elements per Chip
1
Minimum Operating Temperature
-40 °C
Height
15.75mm
Alkuperämaa
United States
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€ 1 150,00
kpl (ilman ALV)
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kpl (Sis ALV:n)
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Tekninen dokumentti
Tekniset tiedot
Merkki
WolfspeedMaximum Drain Source Voltage
1200 V
Maximum Drain Source Resistance
4.6 mΩ
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 mW
Maximum Gate Source Voltage
-4 V, 19 V
Maximum Operating Temperature
+175 °C
Transistor Material
SiC
Length
80mm
Typical Gate Charge @ Vgs
1330 nC @ 4/15V
Width
53mm
Number of Elements per Chip
1
Minimum Operating Temperature
-40 °C
Height
15.75mm
Alkuperämaa
United States