MOSFET Transistors

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Osan tiedot Merkki Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Height Width Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
Toshiba T2N7002BK Dual N-channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 Toshiba N 400 mA 60 V 1.75 Ω 2.1V 1.1V ±20 V SOT-23 Surface Mount 3 - Enhancement - 1 W 26 pF @ 10 V 0.39 nC @ 4.5 V 2.9 x 1.3 x 0.9mm 38 ns - 5.5 ns - 0.9mm 1.3mm 2.9mm 1.1V - +150 °C 2 - -
Nexperia PMV20XNER N-channel MOSFET, 7.2 A, 30 V PMV20XNE, 3-Pin SOT-23 Nexperia N 7.2 A 30 V 38 mΩ 0.9V 0.4V 12 V TO-236AB Surface Mount 3 Single Enhancement Trench MOSFET 6.94 W 1150 pF @ 15 V 12.4 nC @ 4.5 V 3 x 1.4 x 1mm 33 ns PMV20XNE 8 ns 11s 1mm 1.4mm 3mm - - +150 °C 1 -55 °C -
Infineon BSC050N03LSGATMA1 N-channel MOSFET, 80 A, 30 V BSC050N03LS G, 8-Pin TDSON
  • RS-tuotekoodi 170-2271
  • Merkki Infineon
  • Valmistajan tuotenumero BSC050N03LSGATMA1
Infineon N 80 A 30 V 7.5 mΩ 2.2V 1V 20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 50 W 2100 pF @ 15 V 13 nC @ 4.5 V 5.49 x 6.35 x 1.1mm 21 ns BSC050N03LS G 5.2 ns 76s 1.1mm 6.35mm 5.49mm 1.1V - +150 °C 1 -55 °C -
Infineon BSC050N04LSGATMA1 N-channel MOSFET, 85 A, 40 V BSC050N04LS G, 8-Pin TDSON
  • RS-tuotekoodi 170-2275
  • Merkki Infineon
  • Valmistajan tuotenumero BSC050N04LSGATMA1
Infineon N 85 A 40 V 7.2 mΩ 2V 1.2V 20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 57 W 2800 pF @ 20 V 36 nC @ 10 V 5.49 x 6.35 x 1.1mm 26 ns BSC050N04LS G 6.4 ns 100s 1.1mm 6.35mm 5.49mm 1.2V - +150 °C 1 -55 °C -
Toshiba SSM6N43FU Dual N-channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 Toshiba N 500 mA 20 V 1.52 Ω 1V 0.35V ±10 V SOT-363 Surface Mount 6 - Enhancement - 200 mW 46 pF @ 10 V 1.23 nC @ 4 V 2 x 1.25 x 0.9mm 75 ns - 30 ns - 0.9mm 1.25mm 2mm - - +150 °C 2 - -
Toshiba SSM3K339R N-channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F Toshiba N 2 A 40 V 390 mΩ 1.2V - ±12 V SOT-23F Surface Mount 3 Single Enhancement - 2 W 130 pF @ 10 V 1.1 nC @ 4.2 V 2.9 x 1.8 x 0.7mm 8 ns - 13 ns - 0.7mm 1.8mm 2.9mm 1.2V - +150 °C 1 - -
Infineon IRF7205TRPBF P-channel MOSFET, 4.6 A, 30 V IRF7205PbF, 8-Pin SO Infineon P 4.6 A 30 V 130 mΩ 3V 1V 20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 870 pF @ -10 V 27 nC @ 10 V 5 x 4 x 1.5mm 97 ns IRF7205PbF 14 ns 6.6s 1.5mm 4mm 5mm 1.2V - +150 °C 1 -55 °C -
Infineon IRF7343TRPBF N/P-channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion IRF7343PbF, 8-Pin SO Infineon N, P 3.4 A, 4.7 A 55 V 0.065 Ω, 0.17 Ω - 1V 20 V SO Surface Mount 8 - Depletion Power MOSFET 2 W 690 pF @ -25 V, 740 pF @ 25 V 2.3 nC @ 10 V, 24 nC @ 10 V 5 x 4 x 1.5mm 32 ns, 43 ns IRF7343PbF 8.3 ns, 14 ns - 1.5mm 4mm 5mm 1.2V - +150 °C 1 -55 °C -
Infineon IRF7470TRPBF N-channel MOSFET, 10 A, 40 V IRF7470PbF, 8-Pin SO Infineon N 10 A 40 V 30 mΩ 2V 0.8V 12 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 3430 pF @ 20 V 29 nC @ 4.5 V 5 x 4 x 1.5mm 21 ns IRF7470PbF 10 ns 27s 1.5mm 4mm 5mm 1.3V - +150 °C 1 -55 °C -
Infineon IRF7807ZTRPBF N-channel MOSFET, 11 A, 30 V IRF7807ZPbF, 8-Pin SO Infineon N 11 A 30 V 18.2 mΩ 2.25V 1.35V 20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 770 pF @ 15 V 7.2 nC @ 4.5 V 5 x 4 x 1.5mm 10 ns IRF7807ZPbF 6.9 ns 22s 1.5mm 4mm 5mm 1V - +150 °C 1 -55 °C -
Toshiba SSM3J15FV P-channel MOSFET, 100 mA, 30 V, 3-Pin SOT-723 Toshiba P 100 mA 30 V 32 Ω 1.7V 1.1V ±20 V SOT-723 Surface Mount 3 Single Enhancement - 150 mW 9.1 pF @ 3 V - 0.8 x 1.2 x 0.5mm 175 ns - 65 ns - 0.5mm 1.2mm 0.8mm - - +150 °C 1 - -
Toshiba SSM3K37MFV,L3F(B N-channel MOSFET, 250 mA, 20 V, 3-Pin SOT-723
  • RS-tuotekoodi 171-2404
  • Merkki Toshiba
  • Valmistajan tuotenumero SSM3K37MFV,L3F(B
Toshiba N 250 mA 20 V 5.6 Ω 1V 0.35V ±10 V SOT-723 Surface Mount 3 Single Enhancement - 150 mW 12 pF @ 10 V - 0.8 x 1.2 x 0.5mm 36 ns - 18 ns - 0.5mm 1.2mm 0.8mm - - +150 °C 1 - -
Infineon BSR92PH6327XTSA1 P-channel MOSFET, 140 mA, 250 V BSR92P, 3-Pin SC-59
  • RS-tuotekoodi 170-2249
  • Merkki Infineon
  • Valmistajan tuotenumero BSR92PH6327XTSA1
Infineon P 140 mA 250 V 20 Ω 1V 2V 20 V SC-59 Surface Mount 3 Single Enhancement Power MOSFET 500 mW 82 pF @ -25 V 3.6 nC @ 10 V 3 x 1.6 x 1.1mm 75 ns BSR92P 6.4 ns 0.3S 1.1mm 1.6mm 3mm 1.2V - +150 °C 1 -55 °C -
Infineon IRFR5305TRLPBF P-channel MOSFET, 31 A, 55 V IRFR5305PBF, 3-Pin D-PAK Infineon P 31 A 55 V 65 mΩ 4V 2V 20 V D-PAK Surface Mount 3 Single Enhancement Power MOSFET 110 W 1200 pF @ -25 V 63 nC @ 10 V 6.73 x 7.49 x 2.39mm 39 ns IRFR5305PBF 14 ns 8s 2.39mm 7.49mm 6.73mm 1.3V - +175 °C 1 -55 °C -
Toshiba SSM3K09FU N-channel MOSFET, 400 mA, 30 V, 3-Pin SOT-323 Toshiba N 400 mA 30 V 1.7 Ω 1.8V 1.1V ±20 V SOT-323 Surface Mount 3 Single Enhancement - 150 mW 20 pF @ 5 V - 1.25 x 2 x 0.9mm 68 ns - 72 ns - 0.9mm 2mm 1.25mm - - +150 °C 1 - -
Vishay SI2374DS-T1-GE3 N-channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-363
  • RS-tuotekoodi 146-4438
  • Merkki Vishay
  • Valmistajan tuotenumero SI2374DS-T1-GE3
Vishay N 5.9 A 20 V 0.041 Ω 1V 0.4V ±8 V SOT-363 Surface Mount 3 Single Enhancement Power MOSFET 1.7 W 735 pF 13.4 nC 3.04 x 1.4 x 1.02mm 16 ns - 10 ns 29s 1.02mm 1.4mm 3.04mm - - +150 °C 1 -55 °C -
Vishay SI3443DDV-T1-GE3 P-channel MOSFET, 4 A, 20 V, 6-Pin TSOP6
  • RS-tuotekoodi 146-4439
  • Merkki Vishay
  • Valmistajan tuotenumero SI3443DDV-T1-GE3
Vishay P 4 A 20 V 0.09 Ω -1.5V -0.6V ±12 V TSOP6 Surface Mount 6 Single Enhancement Power MOSFET 2.7 W 970 pF 20 nC 3.1 x 1.7 x 1mm 43 ns - 27 ns 14s 1mm 1.7mm 3.1mm - - +150 °C 1 -55 °C -
Vishay SI3457CDV-T1-GE3 P-channel MOSFET, 5.1 A, 30 V, 6-Pin TSOP6
  • RS-tuotekoodi 146-4440
  • Merkki Vishay
  • Valmistajan tuotenumero SI3457CDV-T1-GE3
Vishay P 5.1 A 30 V 0.013 Ω -3V -1V ±20 V TSOP6 Surface Mount 6 Single Enhancement Power MOSFET 3 W 450 pF 10 nC 3.1 x 1.7 x 1mm 20 ns - 40 ns 8s 1mm 1.7mm 3.1mm - - +150 °C 1 -55 °C -
Vishay SI3473CDV-T1-GE3 P-channel MOSFET, 8 A, 12 V, 6-Pin TSOP6
  • RS-tuotekoodi 146-4441
  • Merkki Vishay
  • Valmistajan tuotenumero SI3473CDV-T1-GE3
Vishay P 8 A 12 V 0.036 Ω -1V -0.4V ±8 V TSOP6 Surface Mount 6 Single Enhancement Power MOSFET 4.2 W 2010 pF 43 nC 3.1 x 1.7 x 1mm 62 ns - 10 ns 30s 1mm 1.7mm 3.1mm - - +150 °C 1 -55 °C -
Vishay SI3476DV-T1-GE3 N-channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23
  • RS-tuotekoodi 146-4442
  • Merkki Vishay
  • Valmistajan tuotenumero SI3476DV-T1-GE3
Vishay N 4.6 A 80 V 0.126 Ω 3V 1.2V ±20 V SOT-23 Surface Mount 6 Single Enhancement Power MOSFET 3.6 W 195 pF 4.9 nC 3.1 x 1.7 x 1mm 14 ns - 26 ns 7s 1mm 1.7mm 3.1mm - - +150 °C 1 -55 °C -
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