Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-323 (SC-70)
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Common Anode
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
1V
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Tuotetiedot
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,045
kpl (toimitus kelassa) (ilman ALV)
€ 0,056
kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
250
€ 0,045
kpl (toimitus kelassa) (ilman ALV)
€ 0,056
kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
250
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
250 - 450 | € 0,045 | € 2,25 |
500 - 1450 | € 0,044 | € 2,20 |
1500 - 2950 | € 0,043 | € 2,15 |
3000+ | € 0,041 | € 2,05 |
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-323 (SC-70)
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Common Anode
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
1V
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Tuotetiedot
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.