Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
700 V
Package Type
TO-251
Mounting Type
Through Hole
Pin Count
3+Tab
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
2.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.8mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Height
7.17mm
Series
DMJ70H900HJ3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Tuotetiedot
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,45
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 1,798
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
€ 1,45
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 1,798
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 20 | € 1,45 | € 7,25 |
25 - 95 | € 1,15 | € 5,75 |
100 - 495 | € 0,977 | € 4,88 |
500 - 995 | € 0,839 | € 4,20 |
1000+ | € 0,733 | € 3,66 |
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
700 V
Package Type
TO-251
Mounting Type
Through Hole
Pin Count
3+Tab
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
2.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.8mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Height
7.17mm
Series
DMJ70H900HJ3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Tuotetiedot