Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
790 W
Number of Transistors
1
€ 246.00
€ 123.00 Each (Supplied in a Tray) (Exc. Vat)
€ 308.73
€ 154.36 Each (Supplied in a Tray) (inc. VAT)
Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V
Select packaging type
Production pack (Tray)
2
€ 246.00
€ 123.00 Each (Supplied in a Tray) (Exc. Vat)
€ 308.73
€ 154.36 Each (Supplied in a Tray) (inc. VAT)
Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V
Stock information temporarily unavailable.
Select packaging type
Production pack (Tray)
2
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 2 - 4 | € 123.00 |
| 5+ | € 111.00 |
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
790 W
Number of Transistors
1


