Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3 + 2 Tab
Maximum Drain Source Resistance
19.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.22mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
6.5mm
Height
2.3mm
Series
IPD50N10S3L-16
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,842
1 kpl (2500 kpl/kela) (ilman ALV)
€ 1,044
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 0,842
1 kpl (2500 kpl/kela) (ilman ALV)
€ 1,044
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3 + 2 Tab
Maximum Drain Source Resistance
19.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.22mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
6.5mm
Height
2.3mm
Series
IPD50N10S3L-16
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101