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InfineonChannel Type
P
Maximum Continuous Drain Current
8.83 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
6.22mm
Minimum Operating Temperature
-55 °C
Height
2.41mm
Alkuperämaa
Singapore
Tuotetiedot
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Tarkista myöhemmin uudelleen.
€ 925,00
€ 0,37 1 kpl (2500 kpl/kela) (ilman ALV)
€ 1 160,88
€ 0,464 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 925,00
€ 0,37 1 kpl (2500 kpl/kela) (ilman ALV)
€ 1 160,88
€ 0,464 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
P
Maximum Continuous Drain Current
8.83 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
6.22mm
Minimum Operating Temperature
-55 °C
Height
2.41mm
Alkuperämaa
Singapore
Tuotetiedot
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.