Tekninen dokumentti
Tekniset tiedot
Merkki
MicrochipChannel Type
N
Maximum Continuous Drain Current
120 mA
Maximum Drain Source Voltage
350 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Tuotetiedot
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,946
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,173
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
€ 0,946
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,173
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 20 | € 0,946 | € 9,46 |
30 - 90 | € 0,902 | € 9,02 |
100+ | € 0,817 | € 8,17 |
Tekninen dokumentti
Tekniset tiedot
Merkki
MicrochipChannel Type
N
Maximum Continuous Drain Current
120 mA
Maximum Drain Source Voltage
350 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Tuotetiedot
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.