Tekninen dokumentti
Tekniset tiedot
Merkki
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-20 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.6mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 3,62
€ 0,362 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 4,54
€ 0,454 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 3,62
€ 0,362 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 4,54
€ 0,454 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
10
Varastotiedot eivät ole tilapäisesti saatavilla.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 90 | € 0,362 | € 3,62 |
100 - 190 | € 0,231 | € 2,31 |
200 - 990 | € 0,226 | € 2,26 |
1000 - 1990 | € 0,22 | € 2,20 |
2000+ | € 0,214 | € 2,14 |
Tekninen dokumentti
Tekniset tiedot
Merkki
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-20 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.6mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.