Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Width
4.82mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
15.75mm
Tuotetiedot
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,70
1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 2,108
1 kpl (2 kpl/pakkaus) (Sis ALV:n)
2
€ 1,70
1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 2,108
1 kpl (2 kpl/pakkaus) (Sis ALV:n)
2
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
2 - 8 | € 1,70 | € 3,40 |
10 - 98 | € 1,45 | € 2,90 |
100 - 248 | € 1,10 | € 2,20 |
250 - 498 | € 1,10 | € 2,20 |
500+ | € 0,949 | € 1,90 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Width
4.82mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
15.75mm
Tuotetiedot