Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
42 W
Package Type
TO-220F
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.36 x 2.74 x 16.07mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Tuotetiedot
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tarkista myöhemmin uudelleen.
€ 3,15
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 3,906
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
€ 3,15
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 3,906
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 5 | € 3,15 | € 15,75 |
10 - 95 | € 2,70 | € 13,50 |
100 - 245 | € 2,10 | € 10,50 |
250 - 495 | € 2,00 | € 10,00 |
500+ | € 1,75 | € 8,75 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
42 W
Package Type
TO-220F
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.36 x 2.74 x 16.07mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Tuotetiedot
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.