Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,30
1 kpl (30 kpl/putki) (ilman ALV)
€ 1,632
1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 1,30
1 kpl (30 kpl/putki) (ilman ALV)
€ 1,632
1 kpl (30 kpl/putki) (Sis ALV:n)
30
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.